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RoHS
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Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Inventory: 2923
Minimum: 1
Total Price: USD $13.06
Unit Price: USD $13.064258
≥1 USD $13.064258
≥10 USD $10.720133
≥100 USD $10.384973
≥500 USD $10.049813
≥1000 USD $9.714653

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 313W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10.11pF @ 25V
Current - Continuous Drain (Id) @ 25°C 123A Tc
Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 123A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 369A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 500 mJ

Compliance

RoHS Status Non-RoHS Compliant
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