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STW20NB50

STMicroelectronics
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 20A TO-247
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Inventory: 5279
Minimum: 1
Total Price: USD $3.62
Unit Price: USD $3.61893
≥1 USD $3.61893
≥10 USD $2.969558
≥100 USD $2.87679
≥500 USD $2.784023
≥1000 USD $2.691255

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW20N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 1000 mJ
Feedback Cap-Max (Crss) 75 pF
Turn On Time-Max (ton) 57 ns

Alternative Model

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