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STB18N55M5

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 550V 0.8 Ohm Mdmesh V 13A
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Inventory: 1009
Minimum: 1
Total Price: USD $1.16
Unit Price: USD $1.157257
≥1 USD $1.157257
≥10 USD $1.12322
≥100 USD $1.089183
≥500 USD $1.046637

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 4.6mm
Length 10.75mm
Width 10.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series MDmesh? V
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB18N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 9.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 4 V

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