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2N6764T1

Microsemi Corporation
RoHS
/
Package TO-204AE
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 38A TO-204AE
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code S-XSFM-P3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 38A
JEDEC-95 Code TO-254AA
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 100V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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