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2N6660JTVP02
Vishay SiliconixRoHS
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Package TO-205AD, TO-39-3 Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code unknown
Pin Count 2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 725mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 990mA Tc
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 990mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.99A
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 10 pF
Compliance
RoHS Status Non-RoHS Compliant
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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