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SSM3K7002BF,LF

Toshiba Semiconductor and Storage
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch Sm Sig FET Id 0.2A 60V 20VGSS
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Inventory: 9074
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.08778
≥1 USD $0.08778
≥10 USD $0.07182
≥100 USD $0.069825
≥500 USD $0.06783
≥1000 USD $0.064838
≥10000 USD $0.058853

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series U-MOSIV
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 200mW Ta
Element Configuration Single
Turn On Delay Time 3.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14.5 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 3.1V
Drain to Source Breakdown Voltage 60V

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