APT38N60SC6

Microsemi Corporation

RoHS

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 600V 38A 3-Pin(2+Tab) D3PAK

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount YES

Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Series CoolMOS?

JESD-609 Code e3

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish TIN

Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Terminal Form GULL WING

Pin Count 3

JESD-30 Code R-PSSO-G2

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 278W Tc

Operating Mode ENHANCEMENT MODE

Case Connection DRAIN

FET Type N-Channel

Rds On (Max) @ Id, Vgs 99m Ω @ 18A, 10V

Vgs(th) (Max) @ Id 3.5V @ 1.2mA

Input Capacitance (Ciss) (Max) @ Vds 2826pF @ 25V

Current - Continuous Drain (Id) @ 25°C 38A Tc

Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V

Drain to Source Voltage (Vdss) 600V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Drain Current-Max (Abs) (ID) 38A

Drain-source On Resistance-Max 0.099Ohm

Pulsed Drain Current-Max (IDM) 112A

DS Breakdown Voltage-Min 600V

Avalanche Energy Rating (Eas) 796 mJ

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