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APT12067B2LLG

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1200V 18A T-MAX
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series POWER MOS 7?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 565W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 670m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 4420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 18A
Drain-source On Resistance-Max 0.67Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 1200V
Avalanche Energy Rating (Eas) 2500 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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