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APTML20UM18R010T1AG

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 200V 109A 12-Pin Case SP-1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 480W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 109A Tc
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 109A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 44A
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 3000 mJ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
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