Operating Temperature -40°C~150°C TJ
Packaging Bulk
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 290W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 290W
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 900V
FET Feature Super Junction