Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1996
Series Military, MIL-PRF-19500/592
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard MIL-19500/592
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 27.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 27.4A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 27.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.1Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 500 mJ