Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/555
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Additional Feature HIGH RELIABILTY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Reference Standard MIL-19500
JESD-30 Code R-CQCC-N15
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.35Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 100V