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JANTXV2N6849U

Microsemi Corporation
RoHS
/
Package 18-CLCC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 100V 6.5A 18-Pin CLLCC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Number of Pins 18
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/564
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection SOURCE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.345Ohm
Pulsed Drain Current-Max (IDM) 25A

Compliance

RoHS Status Non-RoHS Compliant
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