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RoHS
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Package TO-267AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 34A SMD1
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Inventory: 2208
Minimum: 1
Total Price: USD $80.89
Unit Price: USD $80.891265
≥1 USD $80.891265
≥10 USD $66.371655
≥100 USD $64.297853
≥500 USD $62.22405
≥1000 USD $60.14925

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-267AB
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 81m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 34A
JEDEC-95 Code TO-276AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.081Ohm
DS Breakdown Voltage-Min 100V
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