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2N6800

Microsemi Corporation
RoHS
/
Package TO-205AF Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 400V TO-205AF TO-39
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Inventory: 17026
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AF Metal Can
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 5.75nC @ 10V
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 1.1Ohm
DS Breakdown Voltage-Min 400V

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Alternative Model

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