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2N6790

Microsemi Corporation
RoHS
/
Package TO-205AF Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V TO-205AF
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AF Metal Can
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code not_compliant
JESD-30 Code O-MBCY-W3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3.5A
Drain-source On Resistance-Max 0.85Ohm
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 200V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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