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IPD80R2K8CEBTMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) TO-252 T/R
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Inventory: 1189
Minimum: 1
Total Price: USD $4.39
Unit Price: USD $4.394985
≥1 USD $4.394985
≥10 USD $3.605963
≥100 USD $3.493245
≥500 USD $3.380528
≥1000 USD $3.26781

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS?
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 90 mJ

Compliance

RoHS Status ROHS3 Compliant

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