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NVB6412ANT4G

ON Semiconductor
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET D2PAK 100V 59A 20MO
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Technical Details

Supply Chain

Factory Lead Time 25 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18.2m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 240A
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