Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Recovery Time 110 ns