BSS123L6433HTMA1

Infineon Technologies

RoHS

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Number of Pins 3

Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Published 1999

Series SIPMOS?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Additional Feature LOGIC LEVEL COMPATIBLE

Technology MOSFET (Metal Oxide)

Terminal Position DUAL

Terminal Form GULL WING

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 360mW Ta

Operating Mode ENHANCEMENT MODE

Power Dissipation 360mW

FET Type N-Channel

Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V

Vgs(th) (Max) @ Id 1.8V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds 69pF @ 25V

Current - Continuous Drain (Id) @ 25°C 170mA Ta

Gate Charge (Qg) (Max) @ Vgs 2.67nC @ 10V

Drain to Source Voltage (Vdss) 100V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

Continuous Drain Current (ID) 170mA

Gate to Source Voltage (Vgs) 20V

Drain-source On Resistance-Max 6Ohm

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