Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 60 mJ