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AOC2411

Alpha & Omega Semiconductor Inc.
RoHS
/
Package 4-UFBGA, WLCSP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 3.4A 4WLCSP
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Technical Details

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 800mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 3.4A

Compliance

RoHS Status RoHS Compliant

Alternative Model

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