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SIB408DK-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-75-6L
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 7A PPAK SC75-6L
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-75-6L
Number of Pins 6
Weight 95.991485mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 5 mJ

Dimensions

Height 750μm
Length 1.6mm
Width 1.6mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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