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SI5855CDC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 3.7A 1206-8
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Inventory: 27001
Minimum: 1
Total Price: USD $0.16
Unit Price: USD $0.161595
≥1 USD $0.161595
≥10 USD $0.132668
≥100 USD $0.128678
≥500 USD $0.124688
≥1000 USD $0.120698
≥10000 USD $0.10773

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Dimensions

Height 1.1mm
Length 3.05mm
Width 1.65mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series LITTLE FOOT?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.3W Ta 2.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 144m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 276pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Rise Time 34 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -3.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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