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EPC2016

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRANS GAN 100V 11A BUMPED DIE
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Technical

Operating Temperature -40°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 11A
Input Capacitance 520pF
Rds On Max 16 mΩ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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