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AUIRF7416QTR

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 10A 8SOIC
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Inventory: 12557
Minimum: 1
Total Price: USD $1.6
Unit Price: USD $1.596998
≥1 USD $1.596998
≥10 USD $1.310715
≥100 USD $1.269818
≥500 USD $1.22892
≥1000 USD $1.188023

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 2.04V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 49ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) -10A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 370 mJ

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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