Packaging Cut Tape (CT)
Published 2012
Series HEXFET?, StrongIRFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 156W
Technology MOSFET (Metal Oxide)
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6419pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 194nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 6.419nF
Rds On Max 1.4 mΩ
Nominal Vgs 3 V