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AUIRFS3207Z

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 170A D2PAK
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Inventory: 2249
Minimum: 1
Total Price: USD $34.72
Unit Price: USD $34.722975
≥1 USD $34.722975
≥10 USD $28.490595
≥100 USD $27.600825
≥500 USD $26.710058
≥1000 USD $25.81929

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6920pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 68 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 670A

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