Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series Automotive, AEC-Q101, HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 74 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Rise Time 330 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V