Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.8W Ta 107W Tc
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V