Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.8W Ta 94W Tc
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 82m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V