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SPI12N50C3HKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 11.6A TO-262
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Inventory: 2965
Minimum: 1
Total Price: USD $1.58
Unit Price: USD $1.575801
≥1 USD $1.575801
≥10 USD $1.486609
≥100 USD $1.402456
≥500 USD $1.323075
≥1000 USD $1.248189

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.6A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11.6A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 34.8A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 340 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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