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IPD60R750E6ATMA1

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) TO-252
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Inventory: 10195
Minimum: 1
Total Price: USD $4.68
Unit Price: USD $4.675283
≥1 USD $4.675283
≥10 USD $3.836385
≥100 USD $3.716685
≥500 USD $3.595988
≥1000 USD $3.476288

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series CoolMOS? E6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 48W Tc
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 373pF
Drain to Source Resistance 680mOhm
Rds On Max 750 mΩ

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