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IPB60R190P6ATMA1

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V TO263-3
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Inventory: 3643
Minimum: 1
Total Price: USD $12.56
Unit Price: USD $12.559523
≥1 USD $12.559523
≥10 USD $10.305173
≥100 USD $9.983978
≥500 USD $9.661785
≥1000 USD $9.339593

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series CoolMOS? P6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 151W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20.2A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 57A
Avalanche Energy Rating (Eas) 419 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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