IPP030N10N3GHKSA1

Infineon Technologies

RoHS

Package TO-220-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-220-3

Supplier Device Package PG-TO220-3

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 2011

Series OptiMOS?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 175°C

Min Operating Temperature -55°C

Technology MOSFET (Metal Oxide)

Number of Elements 1

Power Dissipation-Max 300W Tc

Power Dissipation 300W

Turn On Delay Time 34 ns

FET Type N-Channel

Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id 3.5V @ 275μA

Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V

Current - Continuous Drain (Id) @ 25°C 100A Tc

Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V

Rise Time 58ns

Drain to Source Voltage (Vdss) 100V

Drive Voltage (Max Rds On,Min Rds On) 6V 10V

Vgs (Max) ±20V

Fall Time (Typ) 28 ns

Turn-Off Delay Time 84 ns

Continuous Drain Current (ID) 100A

Gate to Source Voltage (Vgs) 20V

Input Capacitance 14.8nF

Rds On Max 3 mΩ

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