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IPP50R199CPHKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 550V TO-220
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series CoolMOS?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 139W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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