Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series HEXFET?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N9
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Ta 270A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 46A
Drain-source On Resistance-Max 0.001Ohm
Pulsed Drain Current-Max (IDM) 1070A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 160 mJ