Operating Temperature -55°C~135°C TJ
Packaging Tube
Published 2012
Series Z-FET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 135°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 134W Tc
Element Configuration Single
Power Dissipation 152W
Turn On Delay Time 8.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 928pF @ 800V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 47.1nC @ 20V
Rise Time 34ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -5V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 928pF
Drain to Source Resistance 160mOhm
Rds On Max 220 mΩ
Nominal Vgs 2.5 V