Operating Temperature -55°C~135°C TJ
Packaging Tube
Published 2005
Series Z-FET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 135°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 215W Tc
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1915pF @ 800V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 90.8nC @ 20V
Rise Time 38ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -5V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 1.915nF
Drain to Source Resistance 80mOhm
Rds On Max 110 mΩ
Nominal Vgs 2.5 V