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MUN5330DW1T1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS PREBIAS NPN/PNP SOT363
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Total Price: USD $0.02
Unit Price: USD $0.022872
≥1 USD $0.022872
≥10 USD $0.0222
≥100 USD $0.021527
≥500 USD $0.020686

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6

Technical

Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 10kHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 3
Resistor - Base (R1) 1k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 1k Ω

Dimensions

Height 1mm
Length 2.2mm
Width 1.35mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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