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RN1911FE,LF(CT

Toshiba Semiconductor and Storage
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description NPN X 2 BRT, Q1BSR=10K?, Q1BER=I
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Inventory: 4086
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.21252
≥1 USD $0.21252
≥10 USD $0.146916
≥100 USD $0.071702
≥500 USD $0.05982
≥1000 USD $0.041561
≥3000 USD $0.036027

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Technical

Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Alternative Model

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