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NSBC114TDXV6T1

ON Semiconductor
RoHS
/
Package SOT-563
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.5W SOT563
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Pricing & Ordering
Inventory: 3436
Minimum: 1
Total Price: USD $0.82
Unit Price: USD $0.822938
≥1 USD $0.822938
≥10 USD $0.675308
≥100 USD $0.65436
≥500 USD $0.633413
≥1000 USD $0.612465

Technical Details

Physical

Mount Surface Mount
Package / Case SOT-563

Technical

Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
hFE Min 160
DC Current Gain-Min (hFE) 160
Continuous Collector Current 100mA

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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