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RoHS
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Package SOT-963
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS PREBIAS NPN/PNP SSSMINI6
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Technical Details

Technical

Packaging Tape & Reel (TR)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 125mW
Base Part Number NP0G3D3
Power - Max 125mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 80mA
Max Breakdown Voltage 50V
Frequency - Transition 150MHz 80MHz
Resistor - Base (R1) 22kOhms, 47kOhms
Resistor - Emitter Base (R2) 47kOhms

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free
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