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RN1961(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.2W US6
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Inventory: 150
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504
≥10 USD $0.299376

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Number of Elements 2
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Alternative Model

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