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RN1910FE(T5L,F,T)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6

Technical

Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7kOhms

Compliance

RoHS Status RoHS Compliant

Alternative Model

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