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RN2910FE,LF(CT

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Inventory: 4170
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.24024
≥1 USD $0.24024
≥10 USD $0.163548
≥100 USD $0.079649
≥500 USD $0.066472
≥1000 USD $0.046181
≥3000 USD $0.040028

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Packaging Cut Tape (CT)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg

Compliance

RoHS Status RoHS Compliant

Alternative Model

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