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NSBA115TDP6T5G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-963
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Dual PNP Bipolar Digital Transistor (BRT)
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Inventory: 3080
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.111193
≥1 USD $0.111193
≥200 USD $0.04303
≥500 USD $0.041518
≥1000 USD $0.04077

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 408mW
Terminal Form FLAT
Base Part Number NSBA1*
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 160
Resistor - Base (R1) 100k Ω

Alternative Model

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