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NSBA143ZDXV6T5G

ON Semiconductor
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2PNP PREBIAS 0.5W SOT563
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 0.1
Voltage - Rated DC -50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBA1*
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 500mW
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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