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RN1969FE(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 22k Ω

Compliance

RoHS Status RoHS Compliant

Alternative Model

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