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RN1911FETE85LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
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Inventory: 57144
Minimum: 1
Total Price: USD $1
Unit Price: USD $0.9975
≥1 USD $0.9975
≥10 USD $0.818948
≥100 USD $0.793013
≥500 USD $0.767078
≥1000 USD $0.74214

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON

Technical

Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA

Compliance

RoHS Status RoHS Compliant

Alternative Model

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